Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-10-13 |
K4E6E304EC-EGCG |
Samsung |
LPDDR3-2133 (16Gb) |
11200 @ |
USD8.80 |
NA |
stock |
2023-10-13 |
MT53E1G32D2FW-046 WT:B |
Micron |
LPDDR4-4266 1Gx32 (32Gb) |
10000 @ |
USD8.90 |
NA |
stock |
2023-10-13 |
K4F8E304HB-MGCJ |
Samsung |
LPDDR4-3733 256Mx32 (8Gb) |
10240 @ |
Call |
NA |
stock |
2023-10-13 |
K4F6E3S4HM-MGCJ |
Samsung |
LPDDR4-3733 512Mx32 (16Gb) |
12800 @ |
Call |
NA |
4 days |
2023-10-13 |
H9HCNNNBKUMLXR-NEE |
SK hynix |
LPDDR4-4266 (16Gb) |
6000 @ |
Call |
NA |
stock |
2023-10-13 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
--@ |
Call |
NA |
stock |
2023-10-13 |
H9HCNNNCPMMLXR-NEE |
SK hynix |
LPDDR4X-4266 x32 (32Gb) |
2000 @ |
Call |
NA |
stock |
2023-10-13 |
H9JCNNNBK3MLYR-N6E |
SK hynix |
LPDDR5-6400 x16 (16Gb) |
350 @ |
Call |
NA |
stock |
2023-10-13 |
MT47H64M16NF-25E IT:M |
Micron |
DDR2-800 64Mx16 (1Gb) Ind |
10000 @ |
USD1.55 |
NA |
stock |
2023-10-13 |
MT47H128M8SH-25E IT:M |
Micron |
DDR2-800 128Mx8 (1Gb) Ind |
2000 @ |
USD1.80 |
NA |
3 days |
2023-10-13 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
11200 @ |
USD1.18 |
NA |
stock |
2023-10-13 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
5600 @ |
USD1.50 |
NA |
1 day |
2023-10-13 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.36 |
NA |
stock |
2023-10-13 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
11200 @ |
USD1.10 |
NA |
stock |
2023-10-13 |
NT5CC256M16ER-EKI |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
2000 @ |
Call |
NA |
7 days |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 1000 ][ 1001 ][ 1002 ] 1003 [ 1004 ][ 1005 ][ 1006 ] Next>> [ 끝으로 ]