Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-10-11 |
TC58BVG0S3HTA00 |
Kioxia/Toshiba |
1Gb NAND Flash SLC TSOP 24nm |
19200 @ |
USD0.58 |
NA |
3 days |
2023-10-11 |
MT25QU01GBBB8E12-0SIT |
Micron |
1Gb(128MB) SPI NOR Flash |
5000 @ |
USD5.30 |
NA |
5 days |
2023-10-11 |
MT29F2G08ABAEAH4-IT:E |
Micron |
2Gb NAND Flash |
10000 @ |
USD1.75 |
NA |
2 days |
2023-10-11 |
MT29F4G08ABADAWP:D |
Micron |
4Gb NAND Flash Pb-Free SLC |
3000 @ |
USD1.68 |
NA |
1 day |
2023-10-11 |
MT25QU512ABB8E12-0SIT |
Micron |
512Mb SPI NOR Flash |
5000 @ |
USD2.90 |
NA |
Booking |
2023-10-11 |
MT29F2G01ABAGDWB-IT:G |
Micron |
2Gb NAND Flash SLC |
12000 @ |
USD0.75 |
NA |
5 days |
2023-10-10 |
K4F8E3S4HD-MGCL |
Samsung |
LPDDR4-4266 256Mx32 (8Gb) |
50000 @ |
USD2.19 |
NA |
2 days |
2023-10-10 |
H9HCNNN8KUMLHR-NME |
SK hynix |
LPDDR4-3733 x32 (8Gb) DDP |
10000 @ |
USD2.42 |
NA |
5 days |
2023-10-10 |
K4U6E3S4AA-MGCR |
Samsung |
LPDDR4X-4266 x32 (16Gb) |
20480 @ |
USD3.95 |
NA |
1 day |
2023-10-10 |
MT41K64M16TW-107 IT:J |
Micron |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
4000 @ |
USD1.55 |
NA |
3 days |
2023-10-10 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.17 |
NA |
2 days |
2023-10-10 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD2.12 |
NA |
4 days |
2023-10-10 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
20160 @ |
USD1.85 |
NA |
2 days |
2023-10-10 |
K4A4G085WE-BCTD |
Samsung |
DDR4-2666 512Mx8 (4Gb) |
--@ |
USD1.40 |
NA |
re-confirm |
2023-10-10 |
H5ANAG6NCJR-XNC |
SK hynix |
DDR4-3200 1Gx16 (16Gb) |
19200 @ |
USD2.87 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
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