Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-10-06 |
K4T1G164QJ-BCE7 |
Samsung |
DDR2-800 64Mx16 Pb-Free |
2560 @ |
USD2.00 |
NA |
1 day |
2023-10-06 |
MT47H128M8SH-25E:M |
Micron |
DDR2-800 128Mx8 (1Gb) |
10000 @ |
USD1.40 |
NA |
2 days |
2023-10-06 |
H5TQ2G63GFR-RDC |
SK hynix |
DDR3-1866 128Mx16 (2Gb) |
10000 @ |
Call |
NA |
3 days |
2023-10-06 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20000 @ |
USD1.10 |
NA |
4 days |
2023-10-06 |
MT41K128M16JT-107:K |
Micron |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20000 @ |
Call |
NA |
2 days |
2023-10-06 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
10080 @ |
USD1.50 |
NA |
2 days |
2023-10-06 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
20000 @ |
Call |
NA |
stock |
2023-10-06 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.25 |
NA |
3 days |
2023-10-06 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.35 |
NA |
3 days |
2023-10-06 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
11200 @ |
USD1.23 |
NA |
stock |
2023-10-06 |
MT41K64M16TW-107 IT:J |
Micron |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
20000 @ |
USD1.40 |
NA |
stock |
2023-10-06 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
11200 @ |
USD1.16 |
NA |
stock |
2023-10-06 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.30 |
NA |
4 days |
2023-10-06 |
MT41K256M8DA-125:K |
Micron |
DDR3-1600 256Mx8 (2Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
3 days |
2023-10-06 |
H5AN4G6NBJR-UHC |
SK hynix |
DDR4-2400 256Mx16 (4Gb) |
20000 @ |
Call |
NA |
3 days |
|
| Total 18488 Record : 1233 |
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