Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-09-29 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
50000 @ |
USD1.13 |
NA |
5 days |
2023-09-29 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.18 |
NA |
1 day |
2023-09-29 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.10 |
NA |
re-confirm |
2023-09-29 |
K4B1G1646I-BYMA |
Samsung |
DDR3-1866 64Mx16 (1Gb) 1.35V |
50400 @ |
USD1.05 |
NA |
Booking |
2023-09-29 |
K4B1G1646I-BMMA |
Samsung |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
2000 @ |
USD2.50 |
NA |
3 days |
2023-09-29 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
20000 @ |
USD1.03 |
NA |
re-confirm |
2023-09-29 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.10 |
NA |
re-confirm |
2023-09-29 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
50000 @ |
USD1.07 |
NA |
re-confirm |
2023-09-29 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.00 |
NA |
re-confirm |
2023-09-29 |
K4A4G165WE-BCRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
50000 @ |
USD1.10 |
NA |
Booking |
2023-09-29 |
MT40A512M16LY-075:E |
Micron |
DDR4-2666 512MX16 (8Gb) |
20000 @ |
USD1.75 |
NA |
1 day |
2023-09-29 |
H5ANAG6NCJR-XNC |
SK hynix |
DDR4-3200 1Gx16 (16Gb) |
25600 @ |
USD2.80 |
NA |
re-confirm |
2023-09-29 |
H5AN8G8NDJR-XNC |
SK hynix |
DDR4-3200 1Gx8 (8Gb) |
32000 @ |
USD1343.00 |
NA |
3 days |
2023-09-29 |
K4A4G165WE-BCWE |
Samsung |
DDR4-3200 256Mx16 (4Gb) |
20480 @ |
USD1.10 |
NA |
Booking |
2023-09-29 |
MT40A512M16TB-062E:R |
Micron |
DDR4-3200 512Mx16 (8Gb) |
20000 @ |
USD1.63 |
NA |
re-confirm |
|
| Total 18488 Record : 1233 |
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