Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-09-25 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.14 |
NA |
3 days |
2023-09-25 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.28 |
NA |
4 days |
2023-09-25 |
MT41K256M16TW-107 AUT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
booking |
2023-09-25 |
MT41K256M16TW-107 AIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-09-25 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
booking |
2023-09-25 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-09-25 |
K4B4G1646D-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
11200 @ |
USD1.00 |
NA |
stock |
2023-09-25 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-09-25 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.14 |
NA |
stock |
2023-09-25 |
K4B4G0846E-BMMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-09-25 |
K4B1G1646I-BYMA |
Samsung |
DDR3-1866 64Mx16 (1Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-09-25 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
20160 @ |
USD1.10 |
NA |
stock |
2023-09-25 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.20 |
NA |
stock |
2023-09-25 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.20 |
NA |
stock |
2023-09-25 |
MT41K128M16V89C3WC1 |
Micron |
DDR3 Wafe 128MX16 (2Gb) 1.35V |
--@ |
Call |
NA |
stock |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 1124 ][ 1125 ][ 1126 ] 1127 [ 1128 ][ 1129 ][ 1130 ] Next>> [ 끝으로 ]
