Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-09-14 |
MT53E256M32D2DS-053 WT:B |
Micron |
LPDDR4-3733 256Mx32 (8Gb) |
4000 @ |
USD5.35 |
NA |
2 days |
2023-09-14 |
K4F8E3S4HD-MGCL |
Samsung |
LPDDR4-4266 256Mx32 (8Gb) |
30000 @ |
USD2.16 |
NA |
3 days |
2023-09-14 |
K4F8E304HB-MGCJ |
Samsung |
LPDDR4-3733 256Mx32 (8Gb) |
10240 @ |
USD1.40 |
NA |
2 days |
2023-09-14 |
MT53D512M32D2DS-046 AAT:D |
Micron |
LPDDR4-4266 512Mx32 (16Gb) |
4000 @ |
USD9.15 |
NA |
4 days |
2023-09-14 |
MT53E1G32D2NP-046 WT:B |
Micron |
LPDDR4-4266 1Gx32 (32Gb) |
20000 @ |
USD11.30 |
NA |
Booking |
2023-09-14 |
H9HCNNNCPUMLXR-NEE |
SK hynix |
LPDDR4-4266 (32Gb) |
9600 @ |
USD10.30 |
NA |
2 days |
2023-09-14 |
H9JCNNNCP3MLYR-N6E |
SK hynix |
LPDDR5-6400 x16 32Gb(4GB) |
20000 @ |
USD8.75 |
NA |
7 days |
2023-09-14 |
NT5CC64M16GP-DI |
Nanya |
DDR3-1600 64Mx16 (1Gb) 1.35V |
20000 @ |
USD0.75 |
NA |
3 days |
2023-09-14 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
1 day |
2023-09-14 |
MT41K128M8DA-107:J |
Micron |
DDR3-1866 128Mx8 (1Gb) 1.35V |
10000 @ |
USD1.19 |
NA |
4 days |
2023-09-14 |
K4B4G1646E-BCMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) |
20160 @ |
USD1.28 |
NA |
2 days |
2023-09-14 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD0.99 |
NA |
4 days |
2023-09-14 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.14 |
NA |
3 days |
2023-09-14 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
33600 @ |
USD1.05 |
NA |
2 days |
2023-09-14 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.03 |
NA |
7 days |
|
| Total 18488 Record : 1233 |
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