Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-09-08 |
K4F6E3S4HM-MGCJ |
Samsung |
LPDDR4-3733 512Mx32 (16Gb) |
10000 @ |
USD3.60 |
NA |
3 days |
2023-09-08 |
MT53E1G32D2NP-046 WT:B |
Micron |
LPDDR4-4266 1Gx32 (32Gb) |
20000 @ |
USD12.00 |
NA |
Booking |
2023-09-08 |
H9HCNNNCPUMLXR-NEE |
SK hynix |
LPDDR4-4266 (32Gb) |
9600 @ |
USD10.30 |
NA |
2 days |
2023-09-08 |
H9JKNNNFB3AECR-N6H |
SK hynix |
LPDDR5-6400 (64Gb) ExtTemp |
12000 @ |
USD27.00 |
NA |
2 days |
2023-09-08 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
33600 @ |
USD0.93 |
NA |
10 days |
2023-09-08 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
--@ |
USD1.30 |
NA |
3 days |
2023-09-08 |
MT41K1G4RG-107:N |
Micron |
DDR3-1866 1Gx4 (4Gb) 1.35V |
5000 @ |
USD1.30 |
NA |
4 days |
2023-09-08 |
MT41K1G4DA-107:P |
Micron |
DDR3-1866 1Gx4 (4Gb) 1.35V |
8000 @ |
USD3.30 |
NA |
4 days |
2023-09-08 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.00 |
NA |
Stock HK |
2023-09-08 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.03 |
NA |
7 days |
2023-09-08 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
20000 @ |
USD1.03 |
NA |
4 days |
2023-09-08 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.00 |
NA |
3 days |
2023-09-08 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
10000 @ |
USD0.95 |
NA |
1 day |
2023-09-08 |
K4A4G165WE-BIRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
20000 @ |
USD1.40 |
NA |
3 days |
2023-09-08 |
MT40A1G8SA-075:E |
Micron |
DDR4-2666 1Gx8 (8Gb) |
20000 @ |
USD1.70 |
NA |
10 days |
|
| Total 18488 Record : 1233 |
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