Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-06-12 |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-107 IT:K |
Micron |
Call |
stock |
-- @ |
|
2024-06-12 |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
K4B2G1646F-BMMA |
Samsung |
Call |
seeremark |
-- @ |
|
2024-06-12 |
DDR3-1866 256Mx16 (4Gb) 1.35V |
NT5CC256M16ER-EK |
Nanya |
Call |
2days |
20000 @ |
|
2024-06-12 |
DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
USD1 |
stock |
20000 @ |
|
2024-06-12 |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16TW-107 IT:P |
Micron |
USD1.18 |
stock |
20000 @ |
|
2024-06-12 |
DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AIT:P |
Micron |
USD2.7 |
1week |
20000 @ |
|
2024-06-12 |
DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
NT5CC256M16ER-EKI |
Nanya |
USD1.95 |
1week |
30000 @ |
|
2024-06-12 |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16VRP-107 IT:P |
Micron |
Call |
4days |
10000 @ |
|
2024-06-12 |
DDR3-1866 512Mx8 (4Gb) 1.35V |
MT41K512M8DA-107:P |
Micron |
Call |
stock |
-- @ |
|
2024-06-12 |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
MT41K512M8DA-107 IT:P |
Micron |
USD1.4 |
stock |
10000 @ |
|
2024-06-12 |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
MT41K64M16TW-107 IT:J |
Micron |
USD1.25 |
stock |
10000 @ |
|
2024-06-12 |
DDR3-2133 256Mx16 (4Gb) |
K4B4G1646E-BCNB |
Samsung |
Call |
stock |
50400 @ |
|
2024-06-12 |
DDR3-2133 512Mx8 (4Gb) |
K4B4G0846E-BCNB |
Samsung |
Call |
stock |
-- @ |
|
2024-06-12 |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-125 IT:K |
Micron |
USD1.08 |
stock |
50000 @ |
|
2024-06-12 |
DDR3-1600 128Mx16 (2Gb) |
MT41K128M16JT-125:K |
Micron |
Call |
stock |
-- @ |
|
|
| Total 18488 Record : 1233 |
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