Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-06-04 |
DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
USD1.05 |
stock |
20000 @ |
|
2024-06-04 |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16TW-107 IT:P |
Micron |
USD1.18 |
stock |
10000 @ |
|
2024-06-04 |
DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
USD1.08 |
stock |
11200 @ |
|
2024-06-04 |
DDR3-1866 256Mx16 (4Gb) 1.35V |
H5TC4G63EFR-RDA |
SK hynix |
Call |
stock |
20000 @ |
|
2024-06-04 |
DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
NT5CC256M16ER-EKI |
Nanya |
USD1.98 |
stock |
10000 @ |
|
2024-06-04 |
DDR3-1866 256Mx8 (2Gb) 1.35V |
NT5CC256M8JQ-EK |
Nanya |
USD1.2 |
stock |
10000 @ |
|
2024-06-04 |
DDR3-1866 256Mx8 (2Gb) 1.35V |
K4B2G0846F-BYMA |
Samsung |
USD1.13 |
stock |
10240 @ |
|
2024-06-04 |
DDR3-1866 256Mx8 (2Gb) Ind 1.35V |
K4B2G0846F-BMMA |
Samsung |
USD1.13 |
stock |
10240 @ |
|
2024-06-04 |
DDR3-1866 512Mx8 (4Gb) 1.35V |
NT5CC512M8EQ-EK |
Nanya |
USD1.4 |
stock |
10000 @ |
|
2024-06-04 |
DDR3-1866 512Mx8 (4Gb) 1.35V |
K4B4G0846E-BYMA |
Samsung |
USD1.01 |
stock |
10240 @ |
|
2024-06-04 |
DDR3-2133 128Mx16 (2Gb) |
K4B2G1646F-BCNB |
Samsung |
USD1.08 |
stock |
11200 @ |
|
2024-06-04 |
DDR3-2133 256Mx16 (4Gb) |
K4B4G1646E-BCNB |
Samsung |
USD1.08 |
stock |
50400 @ |
|
2024-06-04 |
DDR3-1600 128Mx16 (2Gb) |
MT41K128M16JT-125:K |
Micron |
USD1 |
stock |
10000 @ |
|
2024-06-04 |
DDR4-2666 4Gx8 (32Gb) |
K4ABG085WA-MCTD |
Samsung |
USD8.2 |
stock |
10000 @ |
|
2024-06-04 |
DDR4-2400 1Gx8 (8Gb) |
K4A8G085WB-BCRC |
Samsung |
USD1.95 |
stock |
10240 @ |
|
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 170 ][ 171 ][ 172 ] 173 [ 174 ][ 175 ][ 176 ] Next>> [ 끝으로 ]
