Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-02-01 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
50000 @ |
USD1.22 |
NA |
1 day |
2024-02-01 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.09 |
NA |
2 days |
2024-02-01 |
K4B4G1646D-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD0.98 |
NA |
2 days |
2024-02-01 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
USD6.7 |
NA |
1 day |
2024-02-01 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.08 |
NA |
1 day |
2024-02-01 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.13 |
NA |
1 day |
2024-02-01 |
MT41K64M16TW-107 IT:J |
Micron |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
6000 @ |
USD1.5 |
NA |
1 day |
2024-02-01 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
20160 @ |
USD1.09 |
NA |
2 days |
2024-02-01 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.09 |
NA |
2 days |
2024-02-01 |
H5TQ4G63EFR-TEC |
SK hynix |
DDR3-2133 256Mx16 (4Gb) |
19200 @ |
USD1.19 |
NA |
2 days |
2024-02-01 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.19 |
NA |
2 days |
2024-02-01 |
MT41K256M8DA-125 IT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) Ind 1.35V |
22000 @ |
USD1.2 |
NA |
re-confirm |
2024-02-01 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.01 |
NA |
1 day |
2024-02-01 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD2.15 |
NA |
0 |
2024-02-01 |
K4B4G1646E-BYK0 |
Samsung |
DDR3-1600 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.92 |
NA |
1 day |
|
| Total 18488 Record : 1233 |
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