Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-01-11 |
MT53E512M32D1ZW-046 WT:B |
Micron |
LPDDR4-4266 512Mx32 (16Gb) |
4000 @ |
USD5.10 |
NA |
1 day |
2024-01-11 |
MT53D512M32D2DS-053 WT:D |
Micron |
LPDDR4-3733 512Mx32 (16Gb) |
2000 @ |
USD4.64 |
NA |
1 weeks |
2024-01-11 |
K4F6E3S4HM-MGCJ |
Samsung |
LPDDR4-3733 512Mx32 (16Gb) |
12800 @ |
USD5.45 |
NA |
3 days |
2024-01-11 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
3011 @ |
USD11.00 |
NA |
3 days |
2024-01-11 |
K4U8E3S4AD-MGCL |
Samsung |
LPDDR4X-4266 x32 (8Gb) |
6400 @ |
USD1.94 |
NA |
3 days |
2024-01-11 |
MT41J128M16JT-107:K |
Micron |
DDR3-1866 128Mx16 (2Gb) |
6000 @ |
USD1.11 |
NA |
3 days |
2024-01-11 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
6000 @ |
USD1.07 |
NA |
1 day |
2024-01-11 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
1 day |
2024-01-11 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30000 @ |
USD1.15 |
NA |
5 days |
2024-01-11 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.09 |
NA |
1 day |
2024-01-11 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.20 |
NA |
1 day |
2024-01-11 |
MT41K256M16TW-107 AIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD3.21 |
NA |
1 weeks |
2024-01-11 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD3.07 |
NA |
1 weeks |
2024-01-11 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
11200 @ |
USD1.09 |
NA |
1 day |
2024-01-11 |
NT5CC256M16ER-EKI |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
10000 @ |
USD1.90 |
NA |
3 days |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 315 ][ 316 ][ 317 ] 318 [ 319 ][ 320 ][ 321 ] Next>> [ 끝으로 ]
