Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-01-10 |
K4U8E3S4AD-MGCL |
Samsung |
LPDDR4X-4266 x32 (8Gb) |
6400 @ |
USD1.94 |
NA |
3 days |
2024-01-10 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
1 day |
2024-01-10 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.10 |
NA |
1 day |
2024-01-10 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.20 |
NA |
1 day |
2024-01-10 |
MT41K256M16TW-107 AIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD3.21 |
NA |
1 weeks |
2024-01-10 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD3.07 |
NA |
1 weeks |
2024-01-10 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
11200 @ |
USD1.35 |
NA |
1 day |
2024-01-10 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
USD6.80 |
NA |
1 weeks |
2024-01-10 |
NT5CC512M8EQ-EK |
Nanya |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10000 @ |
USD0.98 |
NA |
3 days |
2024-01-10 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
50000 @ |
USD1.11 |
NA |
booking |
2024-01-10 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.08 |
NA |
1 weeks |
2024-01-10 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
8960 @ |
USD1.11 |
NA |
3 days |
2024-01-10 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
30000 @ |
USD1.17 |
NA |
3 days |
2024-01-10 |
NT5CC128M16IP-DI |
Nanya |
DDR3-1600 128Mx16 (2Gb) 1.35V |
10000 @ |
USD1.18 |
NA |
3 days |
2024-01-10 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.02 |
NA |
1 day |
|
| Total 18488 Record : 1233 |
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