Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-01-08 |
MT53E512M32D1ZW-046 WT:B |
Micron |
LPDDR4-4266 512Mx32 (16Gb) |
10000 @ |
Call |
NA |
7 days |
2024-01-08 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
10240 @ |
USD11.00 |
NA |
3 days |
2024-01-08 |
MT62F1G32D2DS-026 WT:B |
Micron |
LPDDR5 32G 1GX32 FBGA |
--@ |
Call |
NA |
stock |
2024-01-08 |
MT47H64M16NF-25E IT:M |
Micron |
DDR2-800 64Mx16 (1Gb) Ind |
10000 @ |
USD1.65 |
NA |
stock |
2024-01-08 |
MT47H32M16NF-25E IT:H |
Micron |
DDR2-800 32Mx16 (512Mb) Ind |
--@ |
Call |
NA |
stock |
2024-01-08 |
MT47H64M8SH-25E:H |
Micron |
DDR2-800 64Mx8 (512Mb) |
--@ |
Call |
NA |
stock |
2024-01-08 |
MT47H128M8SH-25E IT:M |
Micron |
DDR2-800 128Mx8 (1Gb) Ind |
10000 @ |
USD1.80 |
NA |
stock |
2024-01-08 |
MT47H128M8SH-25E:M |
Micron |
DDR2-800 128Mx8 (1Gb) |
--@ |
Call |
NA |
stock |
2024-01-08 |
MT47H32M16NF-25E:H |
Micron |
DDR2-800 32Mx16 (512Mb) |
--@ |
Call |
NA |
stock |
2024-01-08 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2024-01-08 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.30 |
NA |
stock |
2024-01-08 |
MT41K256M16TW-107 AIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2024-01-08 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2024-01-08 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
11200 @ |
USD1.15 |
NA |
2 days |
2024-01-08 |
NT5CC256M8JQ-EKI |
Nanya |
DDR3-1866 256Mx8 (2Gb) Ind 1.35V |
2000 @ |
Call |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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