Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-21 |
K4FBE3D4HM-MGCJ |
Samsung |
LPDDR4-3733 1Gx32 (32Gb) |
10000 @ |
USD9.20 |
NA |
3 days |
2023-12-21 |
K3LK7K70BM-BGCP |
Samsung |
LPDDR5-6400 x64 (64Gb) |
10000 @ |
USD21.00 |
NA |
3 days |
2023-12-21 |
NT5CC64M16GP-DI |
Nanya |
DDR3-1600 64Mx16 (1Gb) 1.35V |
50000 @ |
USD0.76 |
NA |
1 day |
2023-12-21 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20000 @ |
USD0.99 |
NA |
2 days |
2023-12-21 |
NT5CC128M16JR-EKI |
Nanya |
DDR3-1866 128Mx16 (2Gb) Ind |
30000 @ |
USD1.38 |
NA |
1 day |
2023-12-21 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
20800 @ |
USD1.05 |
NA |
3 days |
2023-12-21 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.30 |
NA |
3 days |
2023-12-21 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30000 @ |
USD1.00 |
NA |
re-confirm |
2023-12-21 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
100000 @ |
USD1.20 |
NA |
4 days |
2023-12-21 |
MT41K256M16TW-107 AIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD3.15 |
NA |
booking |
2023-12-21 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
2000 @ |
USD3.25 |
NA |
3 days |
2023-12-21 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
2 days |
2023-12-21 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
2000 @ |
USD8.85 |
NA |
4 days |
2023-12-21 |
NT5CC512M8EQ-EK |
Nanya |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10000 @ |
USD1.20 |
NA |
3 days |
2023-12-21 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
10000 @ |
USD1.22 |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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