Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-20 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
100000 @ |
USD1.20 |
NA |
4 days |
2023-12-20 |
MT41K256M16TW-107 AIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD3.15 |
NA |
booking |
2023-12-20 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
2000 @ |
USD3.25 |
NA |
3 days |
2023-12-20 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
2 days |
2023-12-20 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
2000 @ |
USD8.85 |
NA |
4 days |
2023-12-20 |
NT5CC512M8EQ-EK |
Nanya |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10000 @ |
USD1.20 |
NA |
3 days |
2023-12-20 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
10000 @ |
USD1.22 |
NA |
4 days |
2023-12-20 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.04 |
NA |
1 day |
2023-12-20 |
NT5CB64M16GP-EK |
Nanya |
DDR3-1866 64Mx16 (1Gb) |
10000 @ |
USD0.93 |
NA |
7 days |
2023-12-20 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.25 |
NA |
1 day |
2023-12-20 |
NT5CB128M16JR-FL |
Nanya |
DDR3-2133 128Mx16 (2Gb) |
10000 @ |
USD1.18 |
NA |
1 day |
2023-12-20 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
22400 @ |
USD1.15 |
NA |
4 days |
2023-12-20 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.20 |
NA |
3 days |
2023-12-20 |
W632GU6NB12I |
Winbond |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
11000 @ |
USD1.45 |
NA |
booking |
2023-12-20 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
50000 @ |
USD1.00 |
NA |
Stock HK |
|
| Total 18488 Record : 1233 |
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