Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-18 |
K4F6E3S4HM-SGCL |
Samsung |
LPDDR4-4266 512Mx32 (16Gb) |
20000 @ |
Call |
NA |
3 days |
2023-12-18 |
K4F6E3S4HM-MGCJ |
Samsung |
LPDDR4-3733 512Mx32 (16Gb) |
20160 @ |
USD4.65 |
NA |
3 days |
2023-12-18 |
MT47H128M16RT-25E IT:C |
Micron |
DDR2-800 128Mx16 (2Gb) Ind |
10000 @ |
Call |
NA |
3 days |
2023-12-18 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20160 @ |
USD1.08 |
NA |
stock |
2023-12-18 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
Call |
NA |
2 days |
2023-12-18 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-12-18 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20160 @ |
USD1.42 |
NA |
3 days |
2023-12-18 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
8000 @ |
USD9.00 |
NA |
3 days |
2023-12-18 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.17 |
NA |
3 days |
2023-12-18 |
K4B4G0846E-BCNB |
Samsung |
DDR3-2133 512Mx8 (4Gb) |
20480 @ |
USD1.55 |
NA |
4 days |
2023-12-18 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
Call |
NA |
2 days |
2023-12-18 |
H5AN4G6NBJR-VKC |
SK hynix |
DDR4-2666 256Mx16 (4Gb) |
12800 @ |
USD1.20 |
NA |
stock |
2023-12-18 |
K4A8G165WC-BITD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
22400 @ |
USD2.15 |
NA |
3 days |
2023-12-18 |
K4AAG165WA-BCWE |
Samsung |
DDR4-3200 1Gx16 (16Gb) |
20480 @ |
USD4.15 |
NA |
1 week |
2023-12-18 |
K4A4G165WE-BCWE |
Samsung |
DDR4-3200 256Mx16 (4Gb) |
13440 @ |
Call |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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