Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-14 |
MT53E512M32D1ZW-046 WT:B |
Micron |
LPDDR4-4266 512Mx32 (16Gb) |
2000 @ |
USD5.05 |
NA |
booking |
2023-12-14 |
K4U6E3S4AA-MGCL |
Samsung |
LPDDR4X-4266 x32 (16Gb) |
10240 @ |
USD4.70 |
NA |
3 days |
2023-12-14 |
MT53E1G32D2NP-046 WT:B |
Micron |
LPDDR4-4266 1Gx32 (32Gb) |
6000 @ |
USD10.20 |
NA |
booking |
2023-12-14 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
5120 @ |
USD11.00 |
NA |
2 days |
2023-12-14 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
30000 @ |
USD0.99 |
NA |
3 days |
2023-12-14 |
MT41K128M16JT-107:K |
Micron |
DDR3-1866 128Mx16 (2Gb) 1.35V |
10000 @ |
USD1.20 |
NA |
5 days |
2023-12-14 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
10080 @ |
USD1.10 |
NA |
5 days |
2023-12-14 |
MT41K128M8DA-107:J |
Micron |
DDR3-1866 128Mx8 (1Gb) 1.35V |
10000 @ |
USD1.40 |
NA |
re-confirm |
2023-12-14 |
K4B1G0846I-BYMA |
Samsung |
DDR3-1866 128Mx8 (1Gb) 1.35V |
30720 @ |
USD1.10 |
NA |
booking |
2023-12-14 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.10 |
NA |
re-confirm |
2023-12-14 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.40 |
NA |
4 days |
2023-12-14 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
2 days |
2023-12-14 |
H5TC4G63EFR-RDA |
SK hynix |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.05 |
NA |
1 day |
2023-12-14 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
30000 @ |
USD1.39 |
NA |
3 days |
2023-12-14 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
--@ |
USD1.45 |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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