Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-13 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.40 |
NA |
4 days |
2023-12-13 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
2 days |
2023-12-13 |
H5TC4G63EFR-RDA |
SK hynix |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.05 |
NA |
1 day |
2023-12-13 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
30000 @ |
USD1.39 |
NA |
3 days |
2023-12-13 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
--@ |
USD1.45 |
NA |
4 days |
2023-12-13 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10000 @ |
USD1.15 |
NA |
3 days |
2023-12-13 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.15 |
NA |
2 days |
2023-12-13 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.30 |
NA |
5 days |
2023-12-13 |
NT5CB128M16JR-FL |
Nanya |
DDR3-2133 128Mx16 (2Gb) |
8000 @ |
USD1.20 |
NA |
re-confirm |
2023-12-13 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.07 |
NA |
2 days |
2023-12-13 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
10000 @ |
USD1.10 |
NA |
1 day |
2023-12-13 |
MT41K128M16JT-125 AIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD2.20 |
NA |
booking |
2023-12-13 |
H5TC4G63EFR-PBA |
SK hynix |
DDR3-1600 256Mx16 (4Gb) 1.35V |
2600 @ |
USD1.20 |
NA |
1 day |
2023-12-13 |
K4A4G165WE-BCRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
10000 @ |
USD1.15 |
NA |
Stock HK |
2023-12-13 |
K4A8G165WB-BIRC |
Samsung |
DDR4-2400 512Mx16 (8Gb) |
4480 @ |
USD2.50 |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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