Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-07 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.13 |
NA |
4 days |
2023-12-07 |
MT41K256M16TW-107 XIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD3.75 |
NA |
5 days |
2023-12-07 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.24 |
NA |
4 days |
2023-12-07 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
70000 @ |
USD1.00 |
NA |
5 days |
2023-12-07 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10000 @ |
USD1.00 |
NA |
booking |
2023-12-07 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
10000 @ |
USD1.30 |
NA |
booking |
2023-12-07 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
50000 @ |
USD1.00 |
NA |
7 days |
2023-12-07 |
H5TC4G63EFR-PBA |
SK hynix |
DDR3-1600 256Mx16 (4Gb) 1.35V |
12800 @ |
USD1.17 |
NA |
1 day |
2023-12-07 |
K4A4G165WE-BCRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
10000 @ |
USD1.15 |
NA |
re-confirm |
2023-12-07 |
H5AN4G6NBJR-UHC |
SK hynix |
DDR4-2400 256Mx16 (4Gb) |
19200 @ |
USD1.29 |
NA |
1 day |
2023-12-07 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
33600 @ |
USD1.30 |
NA |
4 days |
2023-12-07 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
22400 @ |
USD1.86 |
NA |
2 days |
2023-12-07 |
H5AN8G6NCJR-VKC |
SK hynix |
DDR4-2666 512Mx16 (8Gb) |
20000 @ |
USD1.90 |
NA |
3 days |
2023-12-07 |
K4AAG165WA-BCWE |
Samsung |
DDR4-3200 1Gx16 (16Gb) |
12800 @ |
USD4.05 |
NA |
Booking |
2023-12-07 |
H5AN8G8NDJR-XNC |
SK hynix |
DDR4-3200 1Gx8 (8Gb) |
10000 @ |
USD1.77 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
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