Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-07-18 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1 |
NA |
stock |
2024-07-18 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
2 days |
2024-07-18 |
K4B4G1646D-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
USD0.9 |
NA |
stock |
2024-07-18 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
Call |
NA |
3 days |
2024-07-18 |
MT41K512M16VRP-107 AIT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) 1.35V |
1000 @ |
Call |
NA |
stock |
2024-07-18 |
H5TQ4G83EFR-RDC |
SK hynix |
DDR3-1866 512Mx8 (4Gb) |
10000 @ |
USD1.3 |
NA |
stock |
2024-07-18 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
40000 @ |
USD1.05 |
NA |
stock |
2024-07-18 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.1 |
NA |
2 days |
2024-07-18 |
MT41K64M16TW-107 IT:J |
Micron |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
20000 @ |
Call |
NA |
2 days |
2024-07-18 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.1 |
NA |
1 day |
2024-07-18 |
IS43TR16512B-125KBLI |
ISSI |
DDR3-800 512Mx16 (8Gb) |
1000 @ |
Call |
NA |
stock |
2024-07-18 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.1 |
NA |
2 days |
2024-07-18 |
MT41K256M8DA-125:K |
Micron |
DDR3-1600 256Mx8 (2Gb) 1.35V |
30000 @ |
Call |
NA |
stock |
2024-07-18 |
K4B4G1646D-BCK0 |
Samsung |
DDR3-1600 256Mx16 (4Gb) |
2240 @ |
USD3.1 |
NA |
2 days |
2024-07-18 |
MT40A1G8SA-062E IT:R |
Micron |
DDR4-3200 1Gx8 (8Gb) Ind |
2000 @ |
USD3.2 |
NA |
stock |
|
| Total 18488 Record : 1233 |
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