Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-01 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
40320 @ |
USD1.05 |
NA |
7 days |
2023-12-01 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
20160 @ |
USD1.55 |
NA |
3 days |
2023-12-01 |
MT41K128M8DA-107 IT:J |
Micron |
DDR3-1866 128Mx8 (1Gb) Ind 1.35V |
10000 @ |
USD1.70 |
NA |
stock |
2023-12-01 |
K4B4G1646E-BCMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) |
11200 @ |
Call |
NA |
2 days |
2023-12-01 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
16000 @ |
USD1.15 |
NA |
stock |
2023-12-01 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.13 |
NA |
2 days |
2023-12-01 |
K4B8G1646D-MYMA |
Samsung |
DDR3-1866 512Mx16 (8Gb) 1.35V |
4000 @ |
USD22.00 |
NA |
5 days |
2023-12-01 |
H5TQ4G83EFR-RDC |
SK hynix |
DDR3-1866 512Mx8 (4Gb) |
19200 @ |
USD1.20 |
NA |
3 days |
2023-12-01 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.18 |
NA |
2 days |
2023-12-01 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.15 |
NA |
3 days |
2023-12-01 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.20 |
NA |
2 days |
2023-12-01 |
MT41K128M16JT-125 XIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-12-01 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
20000 @ |
USD2.10 |
NA |
5 days |
2023-12-01 |
H5TQ2G83FFR-H9C |
SK hynix |
DDR3-1333 256Mx8 (2Gb) |
18000 @ |
USD2.00 |
NA |
3 days |
2023-12-01 |
MT41K512M16HA-125 IT:A |
Micron |
DDR3-1600 512Mx16 (8Gb) Ind 1.35V |
2000 @ |
USD66.00 |
NA |
stock |
|
| Total 18488 Record : 1233 |
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