Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-01 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.08 |
NA |
2 days |
2023-12-01 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
20000 @ |
USD1.18 |
NA |
1 day |
2023-12-01 |
NT5CC128M16JR-FL |
Nanya |
DDR3-2133 128Mx16 (2Gb) 1.35V |
--@ |
USD1.10 |
NA |
re-confirm |
2023-12-01 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
--@ |
USD1.10 |
NA |
re-confirm |
2023-12-01 |
H5TQ4G63EFR-TEC |
SK hynix |
DDR3-2133 256Mx16 (4Gb) |
28800 @ |
USD1.06 |
NA |
2 days |
2023-12-01 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
30000 @ |
USD1.14 |
NA |
2 days |
2023-12-01 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.00 |
NA |
2 days |
2023-12-01 |
K4B4G1646E-BYK0 |
Samsung |
DDR3-1600 256Mx16 (4Gb) 1.35V |
--@ |
USD2.00 |
NA |
re-confirm |
2023-12-01 |
H5TC4G83EFR-PBA |
SK hynix |
DDR3-1600 512Mx8 (4Gb) 1.35V |
16000 @ |
USD1.01 |
NA |
Booking |
2023-12-01 |
K4A8G165WC-BCTD000 |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
20000 @ |
USD1.78 |
NA |
3 days |
2023-12-01 |
K4A4G085WE-BCRC |
Samsung |
DDR4-2400 512Mx8 (4Gb) |
10240 @ |
USD1.10 |
NA |
2 days |
2023-12-01 |
K4AAG165WB-MCTD |
Samsung |
DDR4-2666 1Gx16 (16Gb) DDP |
5600 @ |
USD3.75 |
NA |
2 days |
2023-12-01 |
K4A8G085WC-BCTD |
Samsung |
DDR4-2666 1Gx8 (8Gb) |
30720 @ |
USD1.82 |
NA |
7 days |
2023-12-01 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
20160 @ |
USD1.25 |
NA |
3 days |
2023-12-01 |
K4AAG085WA-BCTD |
Samsung |
DDR4-2666 2Gx8 (16Gb) |
20000 @ |
USD4.00 |
NA |
Booking |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 592 ][ 593 ][ 594 ] 595 [ 596 ][ 597 ][ 598 ] Next>> [ 끝으로 ]