Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-29 |
K4U6E3S4AA-MGCR |
Samsung |
LPDDR4X-4266 x32 (16Gb) |
--@ |
USD4.60 |
NA |
re-confirm |
2023-11-29 |
H9HCNNNCPMMLXR-NEE |
SK hynix |
LPDDR4X-4266 x32 (32Gb) |
12000 @ |
USD10.35 |
NA |
7 days |
2023-11-29 |
K3LKBKB0BM-MGCP |
Samsung |
LPDDR5-6400 x32 (32Gb) |
10240 @ |
USD9.50 |
NA |
2 days |
2023-11-29 |
K4B1G1646I-BYK0 |
Samsung |
DDR3-1600 64Mx16 (1Gb) 1.35V |
--@ |
USD2.10 |
NA |
re-confirm |
2023-11-29 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
--@ |
USD1.00 |
NA |
re-confirm |
2023-11-29 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
33600 @ |
USD1.05 |
NA |
4 days |
2023-11-29 |
NT5CC128M16JR-EKI |
Nanya |
DDR3-1866 128Mx16 (2Gb) Ind |
--@ |
USD1.70 |
NA |
re-confirm |
2023-11-29 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
30240 @ |
USD1.30 |
NA |
re-confirm |
2023-11-29 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
USD1.10 |
NA |
re-confirm |
2023-11-29 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.00 |
NA |
re-confirm |
2023-11-29 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30240 @ |
USD1.10 |
NA |
3 days |
2023-11-29 |
H5TC4G63EFR-RDA |
SK hynix |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.05 |
NA |
1 day |
2023-11-29 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
--@ |
USD9.10 |
NA |
re-confirm |
2023-11-29 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.10 |
NA |
1 day |
2023-11-29 |
NT5CC128M16JR-FL |
Nanya |
DDR3-2133 128Mx16 (2Gb) 1.35V |
--@ |
USD1.10 |
NA |
re-confirm |
|
| Total 18488 Record : 1233 |
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