Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-28 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
USD1.10 |
NA |
re-confirm |
2023-11-28 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.00 |
NA |
re-confirm |
2023-11-28 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30240 @ |
USD1.10 |
NA |
Re-confirm |
2023-11-28 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
--@ |
USD9.10 |
NA |
re-confirm |
2023-11-28 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.10 |
NA |
re-confirm |
2023-11-28 |
NT5CC128M16JR-FL |
Nanya |
DDR3-2133 128Mx16 (2Gb) 1.35V |
--@ |
USD1.10 |
NA |
re-confirm |
2023-11-28 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
--@ |
USD1.10 |
NA |
re-confirm |
2023-11-28 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
30000 @ |
USD1.12 |
NA |
5 days |
2023-11-28 |
MT41K256M8DA-125:K |
Micron |
DDR3-1600 256Mx8 (2Gb) 1.35V |
100000 @ |
USD1.21 |
NA |
3 days |
2023-11-28 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
--@ |
USD1.00 |
NA |
re-confirm |
2023-11-28 |
K4B4G1646E-BYK0 |
Samsung |
DDR3-1600 256Mx16 (4Gb) 1.35V |
--@ |
USD2.00 |
NA |
re-confirm |
2023-11-28 |
K4A8G165WC-BCTD000 |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
20000 @ |
USD1.78 |
NA |
2 days |
2023-11-28 |
K4A4G165WE-BCRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
--@ |
USD1.10 |
NA |
re-confirm |
2023-11-28 |
H5AN4G6NBJR-UHC |
SK hynix |
DDR4-2400 256Mx16 (4Gb) |
12800 @ |
USD1.28 |
NA |
2 days |
2023-11-28 |
K4A8G085WC-BCTD |
Samsung |
DDR4-2666 1Gx8 (8Gb) |
30720 @ |
USD1.86 |
NA |
re-confirm |
|
| Total 18488 Record : 1233 |
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