Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-16 |
MT53E256M32D2DS-053 AIT:B |
Micron |
LPDDR4-3733 256Mx32 (8Gb) |
4000 @ |
USD6.90 |
NA |
5 days |
2023-11-16 |
K4F8E3S4HD-MGCL |
Samsung |
LPDDR4-4266 256Mx32 (8Gb) |
10240 @ |
USD2.60 |
NA |
0 |
2023-11-16 |
MT53D512M32D2DS-053 WT:D |
Micron |
LPDDR4-3733 512Mx32 (16Gb) |
20000 @ |
USD5.50 |
NA |
5 days |
2023-11-16 |
K4U6E3S4AA-MGCR |
Samsung |
LPDDR4X-4266 x32 (16Gb) |
20480 @ |
USD4.44 |
NA |
3 days |
2023-11-16 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
--@ |
USD9.30 |
NA |
re-confirm |
2023-11-16 |
K4FBE3D4HM-MGCJ |
Samsung |
LPDDR4-3733 1Gx32 (32Gb) |
20000 @ |
USD8.55 |
NA |
10 days |
2023-11-16 |
K3LKBKB0BM-MGCP |
Samsung |
LPDDR5-6400 x32 (32Gb) |
10080 @ |
USD9.40 |
NA |
2 days |
2023-11-16 |
NT5CC64M16GP-DI |
Nanya |
DDR3-1600 64Mx16 (1Gb) 1.35V |
50000 @ |
USD0.77 |
NA |
Booking |
2023-11-16 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
50000 @ |
USD1.05 |
NA |
3 days |
2023-11-16 |
K4B1G0846I-BYMA |
Samsung |
DDR3-1866 128Mx8 (1Gb) 1.35V |
20480 @ |
USD0.92 |
NA |
2 days |
2023-11-16 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
3 days |
2023-11-16 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30000 @ |
USD1.07 |
NA |
2 days |
2023-11-16 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.25 |
NA |
4 days |
2023-11-16 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.12 |
NA |
2 days |
2023-11-16 |
H5TC4G83EFR-RDAR |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
16000 @ |
USD1.05 |
NA |
Booking |
|
| Total 18488 Record : 1233 |
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