Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-08 |
K4U6E3S4AA-MGCL |
Samsung |
LPDDR4X-4266 x32 (16Gb) |
20480 @ |
USD4.35 |
NA |
re-confirm |
2023-11-08 |
K4F6E3S4HM-MGCJ |
Samsung |
LPDDR4-3733 512Mx32 (16Gb) |
20000 @ |
USD4.50 |
NA |
2 days |
2023-11-08 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
10000 @ |
USD8.50 |
NA |
2 days |
2023-11-08 |
MT62F768M64D4BG-031 WT:A |
Micron |
LPDDR5-5500 768Mx64 (48Gb) |
10000 @ |
USD22.50 |
NA |
5 days |
2023-11-08 |
K3LK7K70BM-BGCP |
Samsung |
LPDDR5-6400 x64 (64Gb) |
10000 @ |
USD23.80 |
NA |
re-confirm |
2023-11-08 |
NT5CC128M16JR-EKA |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
10000 @ |
USD1.85 |
NA |
7 days |
2023-11-08 |
K4B1G0846I-BYMA |
Samsung |
DDR3-1866 128Mx8 (1Gb) 1.35V |
12800 @ |
USD1.18 |
NA |
7 days |
2023-11-08 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.25 |
NA |
re-confirm |
2023-11-08 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
USD6.50 |
NA |
3 days |
2023-11-08 |
MT41K512M16HA-107:A |
Micron |
DDR3-1866 512Mx16 (8Gb) 1.35V |
10000 @ |
USD6.60 |
NA |
re-confirm |
2023-11-08 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.09 |
NA |
re-confirm |
2023-11-08 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
20000 @ |
USD1.27 |
NA |
2 days |
2023-11-08 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
--@ |
USD1.10 |
NA |
3 days |
2023-11-08 |
MT41K128M16JT-125 AIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
20000 @ |
USD1.95 |
NA |
1 day |
2023-11-08 |
MT41K256M16HA-125 IT:E |
Micron |
DDR3-1600 256Mx16 (4Gb) Ind 1.35V |
2000 @ |
USD49.00 |
NA |
re-confirm |
|
| Total 18488 Record : 1233 |
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