Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-03 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
stock |
2023-11-03 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.30 |
NA |
stock |
2023-11-03 |
MT41K256M16TW-107 AIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
6000 @ |
USD3.10 |
NA |
5 days |
2023-11-03 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
2000 @ |
USD3.50 |
NA |
7 days |
2023-11-03 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
3 days |
2023-11-03 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
11200 @ |
USD1.50 |
NA |
2 days |
2023-11-03 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
Call |
NA |
5 days |
2023-11-03 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
2000 @ |
USD9.50 |
NA |
3 days |
2023-11-03 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
20000 @ |
USD1.20 |
NA |
stock |
2023-11-03 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
12800 @ |
Call |
NA |
stock |
2023-11-03 |
H5TC4G83EFR-RDA |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
1600 @ |
USD1.25 |
NA |
stock |
2023-11-03 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.26 |
NA |
stock |
2023-11-03 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.13 |
NA |
stock |
2023-11-03 |
MT41K128M16JT-125 AIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
20000 @ |
USD2.10 |
NA |
5 days |
2023-11-03 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD2.30 |
NA |
stock |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 818 ][ 819 ][ 820 ] 821 [ 822 ][ 823 ][ 824 ] Next>> [ 끝으로 ]
