Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-03 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
Re-confirm |
2023-11-03 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.06 |
NA |
1 day |
2023-11-03 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.22 |
NA |
1 day |
2023-11-03 |
MT41K256M16TW-107 AUT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.10 |
NA |
3 days |
2023-11-03 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.10 |
NA |
2 days |
2023-11-03 |
NT5CC256M16ER-EKA |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V AutoG3 |
85 @ |
USD4.80 |
NA |
re-confirm |
2023-11-03 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20160 @ |
USD1.28 |
NA |
3 days |
2023-11-03 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
12800 @ |
USD1.37 |
NA |
3 days |
2023-11-03 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
USD7.60 |
NA |
re-confirm |
2023-11-03 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.10 |
NA |
3 days |
2023-11-03 |
H5TC4G83EFR-RDA |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
50000 @ |
USD1.10 |
NA |
3 days |
2023-11-03 |
H5TQ4G83EFR-TEI |
SK hynix |
DDR3-1866 512Mx8 (4Gb) Ind |
53 @ |
USD4.80 |
NA |
re-confirm |
2023-11-03 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.10 |
NA |
3 days |
2023-11-03 |
MT41K256M8DA-125 AAT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) AutoG 1.35V |
10000 @ |
USD7.20 |
NA |
2 days |
2023-11-03 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
30000 @ |
USD1.07 |
NA |
5 days |
|
| Total 18488 Record : 1233 |
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