Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-02 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20000 @ |
USD1.02 |
NA |
2 days |
2023-11-02 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20160 @ |
USD1.06 |
NA |
2 days |
2023-11-02 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
30240 @ |
USD1.30 |
NA |
7 days |
2023-11-02 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
Re-confirm |
2023-11-02 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.06 |
NA |
1 day |
2023-11-02 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.22 |
NA |
1 day |
2023-11-02 |
MT41K256M16TW-107 AUT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.10 |
NA |
3 days |
2023-11-02 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.10 |
NA |
3 days |
2023-11-02 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
12800 @ |
USD1.37 |
NA |
3 days |
2023-11-02 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
USD6.38 |
NA |
1 day |
2023-11-02 |
NT5CC512M8EQ-EK |
Nanya |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.23 |
NA |
5 days |
2023-11-02 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.10 |
NA |
3 days |
2023-11-02 |
H5TC4G83EFR-RDA |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
50000 @ |
USD1.10 |
NA |
3 days |
2023-11-02 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.10 |
NA |
3 days |
2023-11-02 |
MT41K256M8DA-125 AAT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) AutoG 1.35V |
10000 @ |
USD7.20 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 837 ][ 838 ][ 839 ] 840 [ 841 ][ 842 ][ 843 ] Next>> [ 끝으로 ]
