Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-01 |
K4F8E3S4HD-MGCL |
Samsung |
LPDDR4-4266 256Mx32 (8Gb) |
1280 @ |
USD2.75 |
NA |
1 day |
2023-11-01 |
K4F8E304HB-MGCJ |
Samsung |
LPDDR4-3733 256Mx32 (8Gb) |
30720 @ |
USD2.22 |
NA |
2 days |
2023-11-01 |
MT53E512M32D1ZW-046 WT:B |
Micron |
LPDDR4-4266 512Mx32 (16Gb) |
10000 @ |
USD4.95 |
NA |
Booking |
2023-11-01 |
K4F6E3S4HM-MGCJ |
Samsung |
LPDDR4-3733 512Mx32 (16Gb) |
20480 @ |
USD4.65 |
NA |
5 days |
2023-11-01 |
MT53D1024M32D4DT-046 WT:D |
Micron |
LPDDR4-4266 1Gx32 (32Gb) |
2000 @ |
USD13.80 |
NA |
3 days |
2023-11-01 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
20480 @ |
USD8.60 |
NA |
3 days |
2023-11-01 |
NT5CC64M16GP-DI |
Nanya |
DDR3-1600 64Mx16 (1Gb) 1.35V |
60000 @ |
USD0.78 |
NA |
4 days |
2023-11-01 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20000 @ |
USD1.02 |
NA |
2 days |
2023-11-01 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
Re-confirm |
2023-11-01 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.08 |
NA |
1 day |
2023-11-01 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.30 |
NA |
2 days |
2023-11-01 |
NT5CC512M8EQ-EK |
Nanya |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.23 |
NA |
5 days |
2023-11-01 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.13 |
NA |
2 days |
2023-11-01 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
12800 @ |
USD1.15 |
NA |
3 days |
2023-11-01 |
H5TC4G83EFR-RDA |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
30000 @ |
USD1.15 |
NA |
7 days |
|
| Total 18488 Record : 1233 |
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