Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-10-25 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
19200 @ |
USD1.10 |
NA |
3 days |
2023-10-25 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
USD1.10 |
NA |
3 days |
2023-10-25 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.13 |
NA |
4 days |
2023-10-25 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.09 |
NA |
2 days |
2023-10-25 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
20000 @ |
USD1.23 |
NA |
5 days |
2023-10-25 |
K4B1G1646I-BMMA |
Samsung |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
6000 @ |
USD2.60 |
NA |
3 days |
2023-10-25 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.10 |
NA |
3 days |
2023-10-25 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.20 |
NA |
booking |
2023-10-25 |
MT41K128M16JT-125 AIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
20000 @ |
USD2.20 |
NA |
2 days |
2023-10-25 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
22400 @ |
USD1.22 |
NA |
1 day |
2023-10-25 |
H5AN4G6NBJR-VKC |
SK hynix |
DDR4-2666 256Mx16 (4Gb) |
30400 @ |
USD1.03 |
NA |
2 days |
2023-10-25 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
--@ |
USD1.80 |
NA |
3 days |
2023-10-25 |
H5AN4G8NBJR-VKC |
SK hynix |
DDR4-2666 512Mx8 (4Gb) |
20000 @ |
USD1.20 |
NA |
2 days |
2023-10-25 |
H5ANAG6NCJR-XNC |
SK hynix |
DDR4-3200 1Gx16 (16Gb) |
30400 @ |
USD2.94 |
NA |
3 days |
2023-10-25 |
MT40A512M16LY-062E:E |
Micron |
DDR4-3200 512Mx16 (8Gb) |
6000 @ |
USD2.15 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
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