Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-10-20 |
MT53E512M32D1ZW-046 WT:B |
Micron |
LPDDR4-4266 512Mx32 (16Gb) |
10000 @ |
USD5.20 |
NA |
Booking |
2023-10-20 |
K4U6E3S4AA-MGCR |
Samsung |
LPDDR4X-4266 x32 (16Gb) |
10000 @ |
USD4.05 |
NA |
2 days |
2023-10-20 |
K4F6E3S4HM-MGCJ |
Samsung |
LPDDR4-3733 512Mx32 (16Gb) |
10240 @ |
USD4.70 |
NA |
2 days |
2023-10-20 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20160 @ |
USD1.05 |
NA |
1 day |
2023-10-20 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.12 |
NA |
3 days |
2023-10-20 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.30 |
NA |
1 day |
2023-10-20 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
2000 @ |
USD3.30 |
NA |
5 days |
2023-10-20 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.09 |
NA |
2 days |
2023-10-20 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10000 @ |
USD1.10 |
NA |
re-confirm |
2023-10-20 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
2000 @ |
USD1.40 |
NA |
re-confirm |
2023-10-20 |
H5TQ4G63EFR-TEC |
SK hynix |
DDR3-2133 256Mx16 (4Gb) |
19200 @ |
USD1.13 |
NA |
1 day |
2023-10-20 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.23 |
NA |
4 days |
2023-10-20 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.05 |
NA |
1 day |
2023-10-20 |
H5AN4G6NBJR-UHC |
SK hynix |
DDR4-2400 256Mx16 (4Gb) |
19200 @ |
USD1.17 |
NA |
1 day |
2023-10-20 |
K4A4G085WE-BCRC |
Samsung |
DDR4-2400 512Mx8 (4Gb) |
20480 @ |
USD1.14 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
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