Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-10-19 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.09 |
NA |
2 days |
2023-10-19 |
NT5CC256M16ER-EKI |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
10000 @ |
USD1.75 |
NA |
Booking |
2023-10-19 |
NT5CC512M8EQ-EK |
Nanya |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
6 days |
2023-10-19 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10000 @ |
USD1.10 |
NA |
re-confirm |
2023-10-19 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
2000 @ |
USD1.40 |
NA |
re-confirm |
2023-10-19 |
H5TQ4G63EFR-TEC |
SK hynix |
DDR3-2133 256Mx16 (4Gb) |
19200 @ |
USD1.13 |
NA |
1 day |
2023-10-19 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
50000 @ |
USD1.20 |
NA |
5 days |
2023-10-19 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.05 |
NA |
1 day |
2023-10-19 |
H5AN4G6NBJR-UHC |
SK hynix |
DDR4-2400 256Mx16 (4Gb) |
19200 @ |
USD1.17 |
NA |
1 day |
2023-10-19 |
K4A4G085WE-BCRC |
Samsung |
DDR4-2400 512Mx8 (4Gb) |
20480 @ |
USD1.14 |
NA |
2 days |
2023-10-19 |
K4A8G085WC-BCTD |
Samsung |
DDR4-2666 1Gx8 (8Gb) |
51200 @ |
USD1.80 |
NA |
2 days |
2023-10-19 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
20160 @ |
USD1.18 |
NA |
1 day |
2023-10-19 |
MT40A512M16LY-075:E |
Micron |
DDR4-2666 512MX16 (8Gb) |
20000 @ |
USD1.83 |
NA |
3 days |
2023-10-19 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
30240 @ |
USD1.74 |
NA |
2 days |
2023-10-19 |
H5ANAG6NCJR-XNC |
SK hynix |
DDR4-3200 1Gx16 (16Gb) |
30400 @ |
USD2.83 |
NA |
3 days |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 943 ][ 944 ][ 945 ] 946 [ 947 ][ 948 ][ 949 ] Next>> [ 끝으로 ]
