Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-10-17 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
16000 @ |
USD1.20 |
NA |
1 day |
2023-10-17 |
NT5CC256M16EP-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.25 |
NA |
4 days |
2023-10-17 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.25 |
NA |
4 days |
2023-10-17 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30000 @ |
USD1.10 |
NA |
1 day |
2023-10-17 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
50000 @ |
USD1.30 |
NA |
1 day |
2023-10-17 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
2000 @ |
USD3.30 |
NA |
5 days |
2023-10-17 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.09 |
NA |
2 days |
2023-10-17 |
NT5CC256M16ER-EKI |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
10000 @ |
USD1.75 |
NA |
Booking |
2023-10-17 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
38000 @ |
USD1.55 |
NA |
booking |
2023-10-17 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
2000 @ |
USD8.90 |
NA |
3 days |
2023-10-17 |
MT41K512M16HA-107:A |
Micron |
DDR3-1866 512Mx16 (8Gb) 1.35V |
3060 @ |
USD7.65 |
NA |
1 day |
2023-10-17 |
NT5CC512M8EQ-EK |
Nanya |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
6 days |
2023-10-17 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
4 days |
2023-10-17 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
20000 @ |
USD1.22 |
NA |
re-confirm |
2023-10-17 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10240 @ |
USD1.23 |
NA |
3 days |
|
| Total 18488 Record : 1233 |
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