Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-02-02 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2024-02-02 |
H5TQ2G83GFR-RDJ |
SK hynix |
DDR3-1866 256Mx8 (2Gb) |
8000 @ |
Call |
NA |
4 days |
2024-02-02 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.25 |
NA |
2 days |
2024-02-02 |
MT41K64M16TW-107 IT:J |
Micron |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
10000 @ |
Call |
NA |
2 days |
2024-02-02 |
MT41J128M16JT-093:K |
Micron |
DDR3-2133 128Mx16 (2Gb) |
2000 @ |
Call |
NA |
2 days |
2024-02-02 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
44800 @ |
USD1.15 |
NA |
3 days |
2024-02-02 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.25 |
NA |
stock |
2024-02-02 |
MT41K256M8DA-125 IT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) Ind 1.35V |
20000 @ |
Call |
NA |
5 days |
2024-02-02 |
K4B4G1646E-BCNB000 |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
50000 @ |
Call |
NA |
stock |
2024-02-02 |
H5TC4G83EFR-PBA |
SK hynix |
DDR3-1600 512Mx8 (4Gb) 1.35V |
1600 @ |
USD1.25 |
NA |
1 day |
2024-02-02 |
H5AN8G8NAFR-UHCR |
SK hynix |
DDR4-2400 1Gx8 (8Gb) |
37000 @ |
Call |
NA |
2 days |
2024-02-02 |
H5AN8G8NAFR-UHC |
SK hynix |
DDR4-2400 1Gx8 (8Gb) |
37000 @ |
Call |
NA |
3 days |
2024-02-02 |
MT40A256M16GE-083E:B |
Micron |
DDR4-2400 256Mx16 (4Gb) |
10000 @ |
Call |
NA |
4 days |
2024-02-02 |
K4A8G085WC-BCTD |
Samsung |
DDR4-2666 1Gx8 (8Gb) |
15360 @ |
USD2.3 |
NA |
2 days |
2024-02-02 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
33600 @ |
USD1.5 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 175 ][ 176 ][ 177 ] 178 [ 179 ][ 180 ][ 181 ] Next>> [ 끝으로 ]
