Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-02-02 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.08 |
NA |
1 day |
2024-02-02 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.13 |
NA |
1 day |
2024-02-02 |
MT41K64M16TW-107 IT:J |
Micron |
DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
6000 @ |
USD1.5 |
NA |
1 day |
2024-02-02 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
30240 @ |
USD1.1 |
NA |
1 day |
2024-02-02 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
30240 @ |
USD1.09 |
NA |
1 day |
2024-02-02 |
H5TQ4G63EFR-TEC |
SK hynix |
DDR3-2133 256Mx16 (4Gb) |
19200 @ |
USD1.19 |
NA |
2 days |
2024-02-02 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.19 |
NA |
2 days |
2024-02-02 |
MT41K256M8DA-125 IT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) Ind 1.35V |
22000 @ |
USD1.2 |
NA |
re-confirm |
2024-02-02 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.01 |
NA |
1 day |
2024-02-02 |
K4B4G1646E-BYK0 |
Samsung |
DDR3-1600 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.92 |
NA |
1 day |
2024-02-02 |
H5TC4G63EFR-PBA |
SK hynix |
DDR3-1600 256Mx16 (4Gb) 1.35V |
1600 @ |
USD1.28 |
NA |
1 day |
2024-02-02 |
K4A8G085WB-BCRC |
Samsung |
DDR4-2400 1Gx8 (8Gb) |
20480 @ |
USD2 |
NA |
1 day |
2024-02-02 |
MT40A256M16GE-083E:B |
Micron |
DDR4-2400 256Mx16 (4Gb) |
10000 @ |
USD2.65 |
NA |
1 day |
2024-02-02 |
K4A4G085WE-BCRC |
Samsung |
DDR4-2400 512Mx8 (4Gb) |
30720 @ |
USD1.32 |
NA |
1 day |
2024-02-02 |
K4AAG165WA-BCTD |
Samsung |
DDR4-2666 1Gx16 (16Gb) |
10000 @ |
USD4.45 |
NA |
1 day |
|
| Total 18488 Record : 1233 |
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