Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-01-31 |
MT53E1G32D2NP-046 WT:A |
Micron |
LPDDR4-4266 1Gx32 (32Gb) |
20000 @ |
USD12.5 |
NA |
3 days |
2024-01-31 |
MT53D1024M32D4DT-053 WT:D |
Micron |
LPDDR4-3733 1Gx32 (32Gb) |
8000 @ |
USD11.9 |
NA |
4 days |
2024-01-31 |
MT53D1024M32D4DT-046 WT:D |
Micron |
LPDDR4-4266 1Gx32 (32Gb) |
10000 @ |
USD11.4 |
NA |
1 week |
2024-01-31 |
H9HCNNNCPUMLXR-NEE |
SK hynix |
LPDDR4-4266 (32Gb) |
10080 @ |
USD11 |
NA |
2 days |
2024-01-31 |
MT41K128M16JT-107 IT:K |
Micron |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.32 |
NA |
4 days |
2024-01-31 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
50000 @ |
USD1.07 |
NA |
3 days |
2024-01-31 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
28800 @ |
USD1.22 |
NA |
1 day |
2024-01-31 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.07 |
NA |
1 day |
2024-01-31 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
50000 @ |
USD1.22 |
NA |
1 day |
2024-01-31 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.09 |
NA |
2 days |
2024-01-31 |
K4B4G1646D-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD0.98 |
NA |
2 days |
2024-01-31 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
10240 @ |
USD1.34 |
NA |
1 day |
2024-01-31 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
USD6.7 |
NA |
1 day |
2024-01-31 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
10000 @ |
USD8.8 |
NA |
1 day |
2024-01-31 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.12 |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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