Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-01-31 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.13 |
NA |
1 day |
2024-01-31 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
20160 @ |
USD1.1 |
NA |
3 days |
2024-01-31 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.1 |
NA |
2 days |
2024-01-31 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
4000 @ |
USD1.18 |
NA |
1 day |
2024-01-31 |
MT41K256M8DA-125 IT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) Ind 1.35V |
22000 @ |
USD1.2 |
NA |
1 day |
2024-01-31 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.01 |
NA |
1 day |
2024-01-31 |
MT41K128M16JT-125 AIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
12000 @ |
USD2.02 |
NA |
booking |
2024-01-31 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD2.15 |
NA |
0 |
2024-01-31 |
MT40A256M16GE-083E IT:B |
Micron |
DDR4-2400 256Mx16 (4Gb) Ind |
8000 @ |
USD7.1 |
NA |
4 days |
2024-01-31 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
20160 @ |
USD1.4 |
NA |
3 days |
2024-01-31 |
H5AN4G6NBJR-VKC |
SK hynix |
DDR4-2666 256Mx16 (4Gb) |
20800 @ |
USD1.33 |
NA |
3 days |
2024-01-31 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
20000 @ |
USD2.05 |
NA |
1 day |
2024-01-31 |
H5AN8G6NCJR-VKC |
SK hynix |
DDR4-2666 512Mx16 (8Gb) |
19200 @ |
USD2.02 |
NA |
1 day |
2024-01-31 |
MT40A1G16TB-062E IT:F |
Micron |
DDR4-3200 1Gx16 (16Gb) Ind |
10000 @ |
USD5.4 |
NA |
0 |
2024-01-31 |
MT40A1G16TB-062E:F |
Micron |
DDR4-3200 1Gx16 (16Gb) |
10000 @ |
USD4.4 |
NA |
booking |
|
| Total 18488 Record : 1233 |
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