Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-01-26 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD1.16 |
NA |
stock |
2024-01-26 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.28 |
NA |
2 days |
2024-01-26 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
44800 @ |
USD1.20 |
NA |
stock |
2024-01-26 |
H5TQ4G83EFR-RDC |
SK hynix |
DDR3-1866 512Mx8 (4Gb) |
16000 @ |
Call |
NA |
stock |
2024-01-26 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
10240 @ |
USD1.18 |
NA |
stock |
2024-01-26 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
11200 @ |
USD1.20 |
NA |
stock |
2024-01-26 |
H5TQ4G63EFR-TEC |
SK hynix |
DDR3-2133 256Mx16 (4Gb) |
14400 @ |
USD1.25 |
NA |
stock |
2024-01-26 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.22 |
NA |
stock |
2024-01-26 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
10000 @ |
USD1.08 |
NA |
stock |
2024-01-26 |
H5TC4G83EFR-PBA |
SK hynix |
DDR3-1600 512Mx8 (4Gb) 1.35V |
1600 @ |
USD1.30 |
NA |
2 days |
2024-01-26 |
K4A8G085WC-BCTD |
Samsung |
DDR4-2666 1Gx8 (8Gb) |
10240 @ |
USD2.22 |
NA |
stock |
2024-01-26 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
20160 @ |
USD1.45 |
NA |
2 days |
2024-01-26 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
22400 @ |
USD2.15 |
NA |
stock |
2024-01-26 |
MT40A1G16TB-062E IT:F |
Micron |
DDR4-3200 1Gx16 (16Gb) Ind |
10000 @ |
Call |
NA |
3 days |
2024-01-26 |
MT40A1G16TB-062E:F |
Micron |
DDR4-3200 1Gx16 (16Gb) |
10000 @ |
USD4.25 |
NA |
4 days |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 232 ][ 233 ][ 234 ] 235 [ 236 ][ 237 ][ 238 ] Next>> [ 끝으로 ]
