Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-01-26 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
30240 @ |
USD1.07 |
NA |
2 days |
2024-01-26 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
28800 @ |
USD1.16 |
NA |
1 day |
2024-01-26 |
MT41K256M16TW-107 XIT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30000 @ |
USD3.74 |
NA |
5 days |
2024-01-26 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.10 |
NA |
1 day |
2024-01-26 |
NT5CC256M16ER-EKI |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
18000 @ |
USD1.80 |
NA |
3 days |
2024-01-26 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
10240 @ |
USD1.34 |
NA |
1 day |
2024-01-26 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
30720 @ |
USD1.12 |
NA |
1 day |
2024-01-26 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.17 |
NA |
2 days |
2024-01-26 |
MT41K64M16TW-107 AIT:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD2.20 |
NA |
5 days |
2024-01-26 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
20160 @ |
USD1.10 |
NA |
3 days |
2024-01-26 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.09 |
NA |
1 day |
2024-01-26 |
NT5CB512M8EQ-FL |
Nanya |
DDR3-2133 512Mx8 (4Gb) |
30000 @ |
USD1.40 |
NA |
7 days |
2024-01-26 |
MT41K128M16JT-125 XIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
10000 @ |
USD1.80 |
NA |
booking |
2024-01-26 |
MT41K128M16JT-125 AIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD2.90 |
NA |
booking |
2024-01-26 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD1.90 |
NA |
1 day |
|
| Total 18488 Record : 1233 |
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