Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2025-02-10 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
NT5CC256M16EP-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
Call |
NA |
stock |
2025-02-10 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD0.78 |
NA |
stock |
2025-02-10 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD0.88 |
NA |
2 days |
2025-02-10 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
K4B4G1646D-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
H5TC4G63EFR-RDI |
SK hynix |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
10000 @ |
USD1.15 |
NA |
stock |
2025-02-10 |
MT41K256M8DA-107:K |
Micron |
DDR3-1866 256Mx8 (2Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
20480 @ |
USD1 |
NA |
stock |
2025-02-10 |
MT41K512M16VRN-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
MT41K512M16HA-107:A |
Micron |
DDR3-1866 512Mx16 (8Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
H5TC4G83EFR-RDA |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
12800 @ |
Call |
NA |
stock |
|
| Total 18488 Record : 1233 |
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