Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2025-02-10 |
MT41K512M16HA-125:A |
Micron |
DDR3-1600 512Mx16 (8Gb) 1.35V |
3060 @ |
USD16 |
NA |
3 days |
2025-02-10 |
MT41K512M16HA-125 IT:A |
Micron |
DDR3-1600 512Mx16 (8Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
MT41K1G8TRF-125:E |
Micron |
DDR3-1600 1Gx8 (8Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
MT41K1G8SN-125:A |
Micron |
DDR3-1600 1Gx8 (8Gb) 1.35V |
--@ |
Call |
NA |
stock |
2025-02-10 |
H5AN4G6NBJR-VKIR |
SK hynix |
DDR4-2666 256Mx16 (4Gb) |
10000 @ |
USD1.3 |
NA |
stock |
2025-02-10 |
K4A4G165WE-BIRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
20000 @ |
USD1.45 |
NA |
stock |
2025-02-10 |
K4A4G165WE-BCRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
--@ |
Call |
NA |
stock |
2025-02-10 |
H5AN4G6NBJR-UHC |
SK hynix |
DDR4-2400 256Mx16 (4Gb) |
16000 @ |
Call |
NA |
stock |
2025-02-10 |
K4A8G165WB-BCRC |
Samsung |
DDR4-2400 512Mx16 (8Gb) |
--@ |
Call |
NA |
stock |
2025-02-10 |
NT5AD256M16D4-HR |
Nanya |
DDR4-2666 256Mx16 (4Gb) |
--@ |
Call |
NA |
stock |
2025-02-10 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
20160 @ |
USD1.15 |
NA |
stock |
2025-02-10 |
H5AN4G6NBJR-VKC |
SK hynix |
DDR4-2666 256Mx16 (4Gb) |
19200 @ |
USD1.3 |
NA |
stock |
2025-02-10 |
MT40A512M16LY-075:E |
Micron |
DDR4-2666 512MX16 (8Gb) |
10000 @ |
USD1.65 |
NA |
stock |
2025-02-10 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
20160 @ |
USD1.88 |
NA |
stock |
2025-02-10 |
H5AN8G6NCJR-VKC |
SK hynix |
DDR4-2666 512Mx16 (8Gb) |
30000 @ |
USD1.55 |
NA |
stock |
|
| Total 18488 Record : 1233 |
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