Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-04 |
MT47H64M8SH-25E:H |
Micron |
DDR2-800 64Mx8 (512Mb) |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT47H128M8SH-25E IT:M |
Micron |
DDR2-800 128Mx8 (1Gb) Ind |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT47H128M16RT-25E IT:C |
Micron |
DDR2-800 128Mx16 (2Gb) Ind |
10000 @ |
Call |
NA |
4 days |
2023-12-04 |
MT47H128M16RT-25E:C |
Micron |
DDR2-800 128Mx16 (2Gb) |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT47H128M8SH-25E:M |
Micron |
DDR2-800 128Mx8 (1Gb) |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT47H32M16NF-25E:H |
Micron |
DDR2-800 32Mx16 (512Mb) |
--@ |
Call |
NA |
stock |
2023-12-04 |
W632GU6NB11I |
Winbond |
DDR3-1866 128Mx16 (2Gb) 1.35V Ind. Grade |
--@ |
Call |
NA |
stock |
2023-12-04 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
40320 @ |
USD1.05 |
NA |
stock |
2023-12-04 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
20160 @ |
USD1.55 |
NA |
stock |
2023-12-04 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
stock |
2023-12-04 |
MT41K256M16TW-107:N |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.26 |
NA |
stock |
2023-12-04 |
MT41K256M16TW-107 AUT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD3.10 |
NA |
7 days |
2023-12-04 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.13 |
NA |
stock |
|
| Total 18488 Record : 1233 |
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