Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-12-04 |
MT41K512M16VRP-107 IT:P |
Micron |
DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-12-04 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
30240 @ |
USD1.15 |
NA |
3 days |
2023-12-04 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.20 |
NA |
stock |
2023-12-04 |
MT41K256M8DA-125:K |
Micron |
DDR3-1600 256Mx8 (2Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
stock |
2023-12-04 |
MT41K256M8DA-125 IT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-12-04 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
20000 @ |
USD1.08 |
NA |
stock |
2023-12-04 |
MT41K128M16JT-125 AIT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD2.20 |
NA |
stock |
2023-12-04 |
K4B4G1646D-BMK0 |
Samsung |
DDR3-1600 256Mx16 (4Gb) Ind 1.35V |
18000 @ |
Call |
NA |
stock |
2023-12-04 |
K4A8G085WB-BCRC |
Samsung |
DDR4-2400 1Gx8 (8Gb) |
10240 @ |
Call |
NA |
stock |
2023-12-04 |
K4A8G085WC-BCTD |
Samsung |
DDR4-2666 1Gx8 (8Gb) |
20480 @ |
USD1.95 |
NA |
stock |
2023-12-04 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
20160 @ |
USD1.35 |
NA |
stock |
2023-12-04 |
K4ABG165WA-MCTD |
Samsung |
DDR4-2666 2Gx16 (32Gb) |
--@ |
Call |
NA |
stock |
2023-12-04 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
20160 @ |
USD1.95 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 582 ][ 583 ][ 584 ] 585 [ 586 ][ 587 ][ 588 ] Next>> [ 끝으로 ]
