Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-07-08 |
K4T51083QN-BCE7 |
Samsung |
DDR2-800 64Mx8 Pb-Free Halogen-Free |
20480 @ |
Call |
NA |
3 days |
2024-07-08 |
K4T1G084QJ-BCE7 |
Samsung |
DDR2-800 128Mx8 Pb-Free |
20480 @ |
Call |
NA |
4 days |
2024-07-08 |
K4T51163QN-BCE7 |
Samsung |
DDR2-800 32Mx16 Pb-Free Halogen-Free |
10240 @ |
USD1.25 |
NA |
3 days |
2024-07-08 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.15 |
NA |
4 days |
2024-07-08 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD2.8 |
NA |
stock |
2024-07-08 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2024-07-08 |
K4B2G0846F-BYMA |
Samsung |
DDR3-1866 256Mx8 (2Gb) 1.35V |
20000 @ |
Call |
NA |
4 days |
2024-07-08 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
10000 @ |
USD1.1 |
NA |
stock |
2024-07-08 |
K4B1G1646I-BCNB |
Samsung |
DDR3-2133 64Mx16 (1Gb) |
20000 @ |
USD1.15 |
NA |
3 days |
2024-07-08 |
MT41K256M16HA-125:E |
Micron |
DDR3-1600 256Mx16 (4Gb) 1.35V |
4000 @ |
Call |
NA |
stock |
2024-07-08 |
K4B4G1646E-BCNB000 |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
11200 @ |
Call |
NA |
stock |
2024-07-08 |
MT40A1G8SA-062E IT:R |
Micron |
DDR4-3200 1Gx8 (8Gb) Ind |
10000 @ |
USD3.2 |
NA |
stock |
2024-07-08 |
MT40A2G16TBB-062E:F |
Micron |
DDR4-3200 2Gx16 (32Gb) |
40000 @ |
USD12.8 |
NA |
stock |
2024-07-08 |
MT40A512M8RH-083E:B |
Micron |
DDR4-2400 512Mx8 (4Gb) |
20000 @ |
USD3.5 |
NA |
stock |
2024-07-08 |
MT40A1G8SA-075:E |
Micron |
DDR4-2666 1Gx8 (8Gb) |
10000 @ |
USD1.95 |
NA |
stock |
|
| Total 18488 Record : 1233 |
Page : [ 처음 ]
<< Back [ 60 ][ 61 ][ 62 ] 63 [ 64 ][ 65 ][ 66 ] Next>> [ 끝으로 ]
