Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2024-07-08 |
MT53E256M32D2DS-046 IT:B |
Micron |
LPDDR4-4266 256Mx32 (8Gb) Ind |
10000 @ |
USD11.5 |
NA |
stock |
2024-07-08 |
MT53D512M32D2DS-053 WT:D |
Micron |
LPDDR4-3733 512Mx32 (16Gb) |
10000 @ |
Call |
NA |
4 days |
2024-07-08 |
H9HCNNNBKUMLXR-NEE |
SK hynix |
LPDDR4-4266 (16Gb) |
4800 @ |
USD5.5 |
NA |
3 days |
2024-07-08 |
K3LK3K30EM-BGCN |
Samsung |
LPDDR5-5500 (64Gb) |
10000 @ |
Call |
NA |
stock |
2024-07-08 |
MT47H64M16NF-25E IT:M |
Micron |
DDR2-800 64Mx16 (1Gb) Ind |
10000 @ |
USD1.4 |
NA |
stock |
2024-07-08 |
NT5TU64M16HG-ACI |
Nanya |
DDR2-800 64Mx16 BGA |
4000 @ |
Call |
NA |
2 days |
2024-07-08 |
K4T1G164QJ-BCE7 |
Samsung |
DDR2-800 64Mx16 Pb-Free |
5120 @ |
USD1.9 |
NA |
1 day |
2024-07-08 |
MT47H128M16RT-25E IT:C |
Micron |
DDR2-800 128Mx16 (2Gb) Ind |
10000 @ |
USD5.3 |
NA |
stock |
2024-07-08 |
MT47H128M16RT-25E:C |
Micron |
DDR2-800 128Mx16 (2Gb) |
10000 @ |
USD5.5 |
NA |
2 days |
2024-07-08 |
K4T51083QN-BCE7 |
Samsung |
DDR2-800 64Mx8 Pb-Free Halogen-Free |
20480 @ |
Call |
NA |
3 days |
2024-07-08 |
K4T1G084QJ-BCE7 |
Samsung |
DDR2-800 128Mx8 Pb-Free |
20480 @ |
Call |
NA |
4 days |
2024-07-08 |
K4T51163QN-BCE7 |
Samsung |
DDR2-800 32Mx16 Pb-Free Halogen-Free |
10240 @ |
USD1.25 |
NA |
3 days |
2024-07-08 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.15 |
NA |
4 days |
2024-07-08 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10000 @ |
USD2.8 |
NA |
stock |
2024-07-08 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
|
| Total 18488 Record : 1233 |
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