Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-23 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.28 |
NA |
stock |
2023-11-23 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30360 @ |
USD1.12 |
NA |
stock |
2023-11-23 |
K4B4G1646E-BMMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-11-23 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
12800 @ |
USD1.20 |
NA |
stock |
2023-11-23 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
11200 @ |
USD1.10 |
NA |
stock |
2023-11-23 |
NT5CC128M16IP-DI |
Nanya |
DDR3-1600 128Mx16 (2Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-11-23 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
30000 @ |
USD1.08 |
NA |
stock |
2023-11-23 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
20000 @ |
USD2.10 |
NA |
stock |
2023-11-23 |
MT41K512M8DA-125:P |
Micron |
DDR3-1600 512Mx8 (4Gb) 1.35V |
--@ |
Call |
NA |
stock |
2023-11-23 |
K4B4G1646D-BCK0 |
Samsung |
DDR3-1600 256Mx16 (4Gb) |
--@ |
Call |
NA |
stock |
2023-11-23 |
H5TC4G63EFR-PBA |
SK hynix |
DDR3-1600 256Mx16 (4Gb) 1.35V |
11200 @ |
Call |
NA |
stock |
2023-11-23 |
MT40A256M16GE-083E:B |
Micron |
DDR4-2400 256Mx16 (4Gb) |
10000 @ |
Call |
NA |
stock |
2023-11-23 |
K4A4G165WE-BCRC |
Samsung |
DDR4-2400 256Mx16 (4Gb) |
--@ |
Call |
NA |
stock |
2023-11-23 |
K4A8G165WB-BCRC |
Samsung |
DDR4-2400 512Mx16 (8Gb) |
--@ |
Call |
NA |
stock |
2023-11-23 |
K4A4G085WE-BCRC |
Samsung |
DDR4-2400 512Mx8 (4Gb) |
--@ |
Call |
NA |
stock |
|
| Total 18488 Record : 1233 |
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