Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-23 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20160 @ |
USD1.04 |
NA |
3 days |
2023-11-23 |
K4B1G0846I-BYMA |
Samsung |
DDR3-1866 128Mx8 (1Gb) 1.35V |
20160 @ |
USD1.02 |
NA |
2 days |
2023-11-23 |
K4B4G1646E-BCMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) |
20160 @ |
USD1.30 |
NA |
2 days |
2023-11-23 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.05 |
NA |
1 day |
2023-11-23 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30240 @ |
USD1.07 |
NA |
2 days |
2023-11-23 |
K4B4G1646D-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD0.97 |
NA |
3 days |
2023-11-23 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
100000 @ |
USD1.00 |
NA |
3 days |
2023-11-23 |
H5TC4G83EFR-RDA |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
--@ |
USD0.85 |
NA |
3 days |
2023-11-23 |
K4B1G1646I-BYMA |
Samsung |
DDR3-1866 64Mx16 (1Gb) 1.35V |
20000 @ |
USD1.10 |
NA |
3 days |
2023-11-23 |
K4B2G1646F-BCNB |
Samsung |
DDR3-2133 128Mx16 (2Gb) |
20160 @ |
USD1.12 |
NA |
3 days |
2023-11-23 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.10 |
NA |
2 days |
2023-11-23 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.13 |
NA |
1 day |
2023-11-23 |
MT41K128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
50000 @ |
USD1.05 |
NA |
3 days |
2023-11-23 |
MT41K128M16JT-125 AAT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
10000 @ |
USD1.98 |
NA |
5 days |
2023-11-23 |
MT41J128M16JT-125:K |
Micron |
DDR3-1600 128Mx16 (2Gb) |
10000 @ |
USD1.21 |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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