Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-17 |
MT47H128M16RT-25E IT:C |
Micron |
DDR2-800 128Mx16 (2Gb) Ind |
10000 @ |
USD5.50 |
NA |
stock |
2023-11-17 |
MT47H256M8EB-25E:C |
Micron |
DDR2-800 256Mx8 (2Gb) |
10000 @ |
USD5.15 |
NA |
stock |
2023-11-17 |
K4T51163QI-HCF7 |
Samsung |
DDR2-800 32Mx16 Pb-Free Halogen-Free |
6400 @ |
Call |
NA |
3 days |
2023-11-17 |
NT5CC128M16JR-EK |
Nanya |
DDR3-1866 128Mx16 (2Gb) 1.35V |
20000 @ |
USD1.08 |
NA |
3 days |
2023-11-17 |
MT41K128M16JT-107 IT:K |
Micron |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
--@ |
Call |
NA |
stock |
2023-11-17 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
11200 @ |
USD1.12 |
NA |
stock |
2023-11-17 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
5600 @ |
USD1.48 |
NA |
1 day |
2023-11-17 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
stock |
2023-11-17 |
MT41K256M16TW-107 IT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
20000 @ |
USD1.30 |
NA |
stock |
2023-11-17 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.18 |
NA |
stock |
2023-11-17 |
K4B4G1646D-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20160 @ |
USD1.00 |
NA |
stock |
2023-11-17 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
stock |
2023-11-17 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
10000 @ |
USD1.35 |
NA |
2 days |
2023-11-17 |
K4B4G0846E-BYMA |
Samsung |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20480 @ |
USD1.18 |
NA |
stock |
2023-11-17 |
NT5CC64M16GP-EK |
Nanya |
DDR3-1866 64Mx16 (1Gb) 1.35V |
50000 @ |
Call |
NA |
stock |
|
| Total 18488 Record : 1233 |
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