Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-17 |
K4U6E3S4AA-MGCR |
Samsung |
LPDDR4X-4266 x32 (16Gb) |
20480 @ |
USD4.44 |
NA |
3 days |
2023-11-17 |
K4UBE3D4AA-MGCL |
Samsung |
LPDDR4X-4266 1Gx32 (32Gb) |
20000 @ |
USD9.30 |
NA |
Stock HK |
2023-11-17 |
K3LKBKB0BM-MGCP |
Samsung |
LPDDR5-6400 x32 (32Gb) |
10080 @ |
USD9.40 |
NA |
2 days |
2023-11-17 |
NT5CC64M16GP-DI |
Nanya |
DDR3-1600 64Mx16 (1Gb) 1.35V |
50000 @ |
USD0.77 |
NA |
Booking |
2023-11-17 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
50000 @ |
USD1.05 |
NA |
3 days |
2023-11-17 |
NT5CC256M16ER-EK |
Nanya |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.15 |
NA |
3 days |
2023-11-17 |
MT41K256M16TW-107:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
30000 @ |
USD1.07 |
NA |
2 days |
2023-11-17 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
10080 @ |
USD1.10 |
NA |
1 day |
2023-11-17 |
MT41K512M8DA-107:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
20000 @ |
USD1.12 |
NA |
2 days |
2023-11-17 |
H5TC4G83EFR-RDAR |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
16000 @ |
USD1.05 |
NA |
Booking |
2023-11-17 |
H5TC4G83EFR-RDA |
SK hynix |
DDR3-1866 512Mx8 (4Gb) 1.35V |
16000 @ |
USD1.05 |
NA |
Booking |
2023-11-17 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
2 days |
2023-11-17 |
K4B1G1646I-BYMA |
Samsung |
DDR3-1866 64Mx16 (1Gb) 1.35V |
6000 @ |
USD1.20 |
NA |
3 days |
2023-11-17 |
K4B4G1646E-BCNB |
Samsung |
DDR3-2133 256Mx16 (4Gb) |
20160 @ |
USD1.08 |
NA |
2 days |
2023-11-17 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
30000 @ |
USD1.18 |
NA |
4 days |
|
| Total 18488 Record : 1233 |
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